Exposure dose for targets and large areas


Using proximity effect corrections on layouts often enhances the pattern fidelity via dose modulation; however, this modulation can lead to remnant photoresist together with structures-size off target. Improving the overall sample quality requires a compromise between photoresist-clearing and structures on size.


Lowering a process contrast and increasing its sensitivity is a method that helps achieve the desired outcome. BEAMER introduces a setting for optimal contrast and uniform clearing, which solves the issues of photoresist residuals and widened structures.