Lithography simulation with LAB enables OPC for Mask Aligner:
Iso / dense bias adjustement
Size and position of OPC feature (serifs, hammerhead)
Semi-automated layout optimization
Exposing the pattern multiple times improves line-edge roughness , CD uniformity, resolution and results in a more uniform dose distribution. Shifting the fields and/or subfields between the exposures additionally reduces field / subfield stitching issues.
BEAMER enables high resolution in conjunction with fast writing through techniques such as Bulk & Sleeve split, Coarse & Fine split, intelligent Multipass, and PEC.
Reverse tone photonic crystals are an interesting fracturing challenge. Standard mechanisms lead to sub-optimal fracturing that need to be improved. A combination of boolean operations in conjunction with curved fracturing results in highly symmetric fracturing of the photonic crystals.
Exposing patterns with complex or mixed characteristics can be challenging and may require breaking up into multiple exposures. Take advantage of multiple options for fracturing, sorting or field control within a single exposure file and achieve optimum results for complex layouts.
The 3D PEC feature of BEAMER is the ultimate solution for structuring 3D resist profiles. Exposure doses are automatically calculated based on the resist contrast curve, the proximity effect PSF, and the layout specifying the target thickness at all positions.
LAB supports the new MO Exposure Optics of SUSS mask aligner:
Includes a library of predefined source shapes
Allows to optimize source shape and mask layout in combination
BEAMER supports the usage of variables with formulas providing a powerful tool in combination with the loops to manipulate patterns.