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Electron- and Laser-Beam Lithography Software

Data preparation software 

High-resolution and high-throughput electron- beam lithography is severely impacted by process effects, electron scattering effects, and tool artifacts resulting in non-ideal pattern transfer. Although the electron-beam tool is a highly sophisticated and expensive printer, the pattern data needs to be optimized to significantly reduce the effects of various error sources such as beam positioning between shapes, filling shapes with “shots” on a discrete grid, field position dependent aberrations, stitching between fields, the spread of energy by electron scattering (proximity) and process effects.

 

High-resolution and high-throughput electron- beam lithography is severely impacted by process effects, electron scattering effects, and tool artifacts resulting in non-ideal pattern transfer. Although the electron-beam tool is a highly sophisticated and expensive printer, the pattern data needs to be optimized to significantly reduce the effects of various error sources such as beam positioning between shapes, filling shapes with “shots” on a discrete grid, field position dependent aberrations, stitching between fields, the spread of energy by electron scattering (proximity) and process effects.

BEAMER is the most comprehensive lithography software for optimum electronand laser-beam exposure:

 

  • Support for all major electron- and laser-beam exposure systems
  • Superior machine specific fracturing of complex curved layouts
  • Optimized field and shot placement
  • Writing order control and advanced writing strategies
  • Library of comprehensive layout processing functions
  • Support for all major layout formats
  • Integrated layout editor
  • Build-in Viewer for immediate inspection, verification, and measurement of patterns
  • Powerful proximity and process effect correction technology
  • Electron-beam simulation of absorbed energy and resist contours

 

BEAMER Major Features

Layout Import / Export:

  • Layouts of all major formats, without size limitation (GDSII, CIF, DXF, LTXT, OASIS, BMP, DWG)
  • Electron- and laser-beam machine formats (Raith, JEOL, Elionix, Crestec, ADVANTEST, MEBES, Vistec, Heidelberg)

Advanced Fracturing:

  • Support of all major machine formats
  • Optimized for arbitrary shapes
  • Curved fracturing
  • Correction for shot positioning
  • Beam Step Size (BSS) fracturing
  • Field position control (tiled, floating, manual)
  • Multi-pass exposure
  • Writing order control

Integrated Layout Editor:

  • Create new layouts
  • Edit layout within flow

VIEWER:

  • Integrated detachable global viewer
  • Multi-view
  • Feature Measurements
  • Shot and field placement view
  • Write order and field visualization
  • Dose assignment

Layout and Boolean Operation:

  • Healing, Biasing, Sizing, Merge, Tone reversal (NOT)
  • AND, OR, XOR, P-XOR, MINUS
  • Extract layer, datatype, cell, region
  • Scale, Shift, Rotation, Mirror
  • Filter geometries by width, height, area, angle, and relative dose
  • Grid adjustment
  • Mapping layout layers and datatypes
  • Pre-fracture
  • Cell Replace
  • Hierarchy Flatten or Build

Flow Control Modules

  • Parametrized loops with IF, SELECT, and FILTER operations
  • Script for starting command line application from flow
  • Optimizer for parameter fitting

2D Dose Process Effect Correction

  • Fast and robust edge equalization technique
  • Excellent dimension control by optimized dose on feature edges
  • Fracturing based on absorbed energy distribution
  • Perfectly symmetrical and stable for arbitrary shapes
  • Process correction (e. g. lateral development, loading)

2D Shape Process Effect Correction

  • Model based shape correction of short and mid-range effects
  • Combination with long-range correction with dose modulation
  • Model based contrast enhancement (“undersize – overdose”)
  • Corner sharpening correction
  • Dose PEC combined with rule based correction for edges, inner and outer corners.

3D Process Effect Correction

  • Correction for defined resist thickness at any layout position (resist profile) for single layer resist (e.g. 3D gratings, 3D holograms, angled sidewalls, lenses)
  • Correction for critical dimensions (CD) for each layer for a multi layer resist (e.g. T-gate structures)
  • Additional compensation for substrate topography or material variation

Laser-beam Lithography Correction

  • 3D Gray Tone Lithography
  • OPC for resolution and linearity enhancement

Flexible PSF and Process Modeling

  • PSF from Monte Carlo simulation or experimental table
  • Visualization and fit of PSF function
  • Apply full PSF data or Gaussian approximation
  • Process loading, shot size dependent blur, fogging effect

Electron-beam Modeling

  • 2D intensity image, 2D resist contour at multiple thresholds
  • 1D / 2D image viewing and analysis
  • Multi- and matrix-view for automated runs
  • Metrology for automated measurement and comparison to experiment
  • 3D resist simulation can be performed with the LAB software package
Comprehensive Information (PDF) Related publications

BEAMER user interface with dose visualization

Rule OPC feature of BEAMER for individual process correction

VIEWER - included in BEAMER

Write order display in the BEAMER

Paul Scherer Institute -– Switzerland
(Scale bar corresponds to 1 ?m)

Center for Nanoscale Science and Technology (NIST) – USA
(Scale bar corresponds to 200 nm)

AMO GmbH – Germany
(Scale bar corresponds to 30 nm)